2 papers
cond-mat.mes-hall2020
Mapping Charge Recombination and the Effect of Point Defect Insertion in Gallium Arsenide Nanowire Heterojunctions
Brian Zutter, Hyunseok Kim, William Hubbard +4
Electronic devices are extremely sensitive to defects in their constituent semiconductors, but locating electronic point defects in bulk semiconductors has previously been impossib…
physics.app-ph2019
Comprehensive Three-dimensional Computational Model Enables Design of Nanostructured Infrared Detectors
Dingkun Ren
Due to the unique three-dimensional (3-D) geometries of nanowire-i.e., large surface-to-volume ratios and smaller cross-sections at the nanowire-substrate interfaces-their carrier…