activity
20162024
most citedHeterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

15 citations · 16 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2024

Automatic Extraction and Compensation of P-Bit Device Variations in Large Array Utilizing Boltzmann Machine Training

Bolin Zhang, Yu Liu, Tianqi Gao +4

Probabilistic Bit (P-Bit) device serves as the core hardware for implementing Ising computation. However, the severe intrinsic variations of stochastic P-Bit devices hinder the lar…

cond-mat.mes-hall2022

Time Division Multiplexing Ising Computer Using Single Tunable True Random Number Generator Based on Spin Torque Nano-Oscillator

Bolin Zhang, Yu Liu, Tianqi Gao +3

Ising computer is a powerful computation scheme to deal with NP-hard optimization problems that cannot be efficiently addressed by conventional computers. A robust probabilistic bi…

cond-mat.mes-hall2019

Frequency Modulation and Voltage Locking of the Voltage Controlled Spin Oscillators (VCSOs)

Lang Zeng, Hao-Hsuan Chen, Deming Zhang +4

The oscillating frequency of typical Spin Torque Nano Oscillators (STNOs) can be modulated by injected DC current or bias magnetic field. And phase locking of STNOs to an external…

physics.app-ph2017★ 15 cited

Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Yu Zhang, Xiaoyang Lin, Jean-Paul Adam +14

Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies…

cond-mat.mes-hall2016★ 1 cited

Amplicification of Voltage Controlled Magnetic Anisotropy Effect with Negative Capacitance

Lang Zeng, Tianqi Gao, Deming Zhang +6

The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability…