154 citations · 185 across the 8 of their papers we have counts for
8 papers
An Ultra-Low Power and Fast Ising Machine using Voltage-Controlled Magnetoresistive Random Access Memory
Sai Li, Yihao Zhang, Albert Lee +6
Physics-inspired computing paradigms, such as Ising machines, are emerging as promising hardware alternatives to traditional von Neumann architectures for tackling computationally…
Automatic Extraction and Compensation of P-Bit Device Variations in Large Array Utilizing Boltzmann Machine Training
Bolin Zhang, Yu Liu, Tianqi Gao +4
Probabilistic Bit (P-Bit) device serves as the core hardware for implementing Ising computation. However, the severe intrinsic variations of stochastic P-Bit devices hinder the lar…
Time Division Multiplexing Ising Computer Using Single Tunable True Random Number Generator Based on Spin Torque Nano-Oscillator
Bolin Zhang, Yu Liu, Tianqi Gao +3
Ising computer is a powerful computation scheme to deal with NP-hard optimization problems that cannot be efficiently addressed by conventional computers. A robust probabilistic bi…
Hysteretic Mutual Synchronization of PERP-STNO Pairs Analyzed by a Generalized Pendulum-like Model
Hao-Hsuan Chen, Ching-Ming Lee, Lang Zeng +2
At present, the Kuramoto model is the standard and widely accepted theoretical approach for analyzing the synchronization of spin-torque nano-oscillators (STNOs) coupled by an inte…
Frequency Modulation and Voltage Locking of the Voltage Controlled Spin Oscillators (VCSOs)
Lang Zeng, Hao-Hsuan Chen, Deming Zhang +4
The oscillating frequency of typical Spin Torque Nano Oscillators (STNOs) can be modulated by injected DC current or bias magnetic field. And phase locking of STNOs to an external…
Amplicification of Voltage Controlled Magnetic Anisotropy Effect with Negative Capacitance
Lang Zeng, Tianqi Gao, Deming Zhang +6
The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability…
Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions
Jiaqi Zhou, Weisheng Zhao, Yin Wang +8
It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tun…
Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures
Shouzhong Peng, Mengxing Wang, Hongxin Yang +9
Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in ST…