S. Khan

SiAlON is a prominent example of systems suitable as hosts for creating materials for light-emitting diodes (LEDs). In this work, the electronic structure of a series of semiordere…

cond-mat.mtrl-sci2019

Local geometry around B atoms in B/Si(111) from polarized x-ray absorption spectroscopy

Saleem Ayaz Khan, Martin Vondráček, Peter Blaha +4

The arrangement of B~atoms in a doped Si(111)- $(3 \times 3) R 3 0^{\circ}$ :B system was studied using near-edge x-ray absorption fine structure (NEXAFS). Boron atoms were…

cond-mat.mtrl-sci2018

Large magnetic gap at the Dirac point in a Mn-induced Bi $_{2}$ Te $_{3}$ heterostructure

E. D. L. Rienks, S. Wimmer, P. S. Mandal +15

Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provides quantized edge states for lossless charge transport applications. The edge…

Dependence of the electronic structure of β-Si6−z​Alz​Oz​N8−z​ on the (Al,O) concentration z and on the temperature

Local geometry around B atoms in B/Si(111) from polarized x-ray absorption spectroscopy

Large magnetic gap at the Dirac point in a Mn-induced Bi2​Te3​ heterostructure

Dependence of the electronic structure of $β$ -Si $_{6 - z}$ Al $_{z}$ O $_{z}$ N $_{8 - z}$ on the (Al,O) concentration $z$ and on the temperature

Large magnetic gap at the Dirac point in a Mn-induced Bi $_{2}$ Te $_{3}$ heterostructure