D. O. Scanlon

activity

20142026

most citedDetermination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals

87 citations · 115 across the 3 of their papers we have counts for

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Showing 2019 · cond-mat.mtrl-sciShow all

1 paper · 2 filters

cond-mat.mtrl-sci2019★ 28 cited

Intrinsic point defects and the $n$ - and $p$ -type dopability of the narrow gap semiconductors GaSb and InSb

J. Buckeridge, T. D. Veal, C. R. A. Catlow +1

The presence of defects in the narrow-gap semiconductors GaSb and InSb affects their dopability and hence applicability for a range of optoelectronic applications. Here, we report…

Intrinsic point defects and the n- and p-type dopability of the narrow gap semiconductors GaSb and InSb

Intrinsic point defects and the $n$ - and $p$ -type dopability of the narrow gap semiconductors GaSb and InSb