307 citations · 335 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2019★ 28 cited
Intrinsic point defects and the - and -type dopability of the narrow gap semiconductors GaSb and InSb
J. Buckeridge, T. D. Veal, C. R. A. Catlow +1
The presence of defects in the narrow-gap semiconductors GaSb and InSb affects their dopability and hence applicability for a range of optoelectronic applications. Here, we report…
cond-mat.mtrl-sci2012★ 307 cited
Controlling bulk conductivity in topological insulators: Key role of anti-site defects
D. O. Scanlon, P. D. C. King, R. P. Singh +5
The binary Bi-chalchogenides, Bi2Ch3, are widely regarded as model examples of a recently discovered new form of quantum matter, the three-dimensional topological insulator (TI) [1…