Intrinsic point defects and the $n$- and $p$-type dopability of the narrow gap semiconductors GaSb and InSb

J. Buckeridge, T. D. Veal, C. R. A. Catlow +1

The presence of defects in the narrow-gap semiconductors GaSb and InSb affects their dopability and hence applicability for a range of optoelectronic applications. Here, we report…