2 citations · 4 across the 3 of their papers we have counts for
3 papers
physics.app-ph2019★ 2 cited
Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors
Wei-Chih Cheng, Minghao He, Siqi Lei +9
In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the sur…
physics.app-ph2019★ 1 cited
Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEMTs
Wei-Chih Cheng, Tao Fang, Siqi Lei +7
Due to the piezoelectric nature of GaN, the 2DEG in AlGaN/GaN HEMT could be engineered by strain. In this work, SiNx deposited using dual-frequency PECVD was used as a stressor. Th…
cond-mat.mes-hall2016★ 1 cited
Interlayer Conductance of Graphene with Multiple Transfer Process
Yin Sun, Xintong Zhang, Longyan Wang +3
Electrical properties of multi-layer graphene are subject to variations due to random interlayer alignments. In this work we reported graphene interlayer conductance without specia…