54 citations · 111 across the 8 of their papers we have counts for
8 papers
Quantum spin Hall effect in two-dimensional transition-metal chalcogenides
Xing Wang, Wenhui Wan, Yanfeng Ge +2
Based on first-principles calculations, we have found a family of 2D transition-metal (TM) chalcogenides MX5 (M = Zr, Hf and X = S, Se and Te) can host quantum spin Hall (QSH) effe…
Large magnetic anisotropy energy and robust half-metallic ferromagnetism in 2D MnXSe (X = As, Sb)
Tengfei Hu, Wenhui Wan, Yingmei Li +2
In recent years, intrinsic two-dimensional (2D) magnetism aroused great interest because of its potential application in spintronic devices. However, low Curie temperature (\emph{T…
First-principles prediction into robust high-performance photovoltaic double perovskites ASiI (A = K, Rb, Cs)
Qiaoqiao Li, Liujiang Zhou, Yanfeng Ge +5
Despite the exceeding 23\% photovoltaic efficiency achieved in organic-inorganic hybrid perovskite solar cells obtaining, the stable materials with desirable band gap are rare and…
Electronic, magnetic, and optical properties of Mn-doped GaSb: a first-principles study
Chuang Wang, Wenhui Wan, Yanfeng Ge +3
Half-metallic ferromagnets can produce fully spin-polarized conduction electrons and can be applied to fabricate spintronic devices. Thus, in this study, the electronic structure,…
Type-I and type-II Nodal Lines Coexistence in the Antiferromagnetic monolayer CrAs
Busheng Wang, Heng Gao, Qing Lu +5
Topological nodal line semimetals, hosting one-dimensional Fermi lines with symmetry protection, has become a hot topic in topological quantum matter. Due to the breaking of time r…
Investigation of interface spacing, stability, band offsets and electronic properties on (001) SrHfO3/GaAs interface : First principles calculations
Li-Bin Shi, Xiao-Ming Xiu, Xu-Yang Liu +3
SrHfO3 is a potential dielectric material for metal-oxide-semiconductor (MOS) devices. SrHfO3/GaAs interface has attracted attention due to its unique properties. In this paper, th…
First principles calculations of the interface properties of amorphous-Al2O3/MoS2 under non-strain and biaxial strain conditions
Li-Bin Shi, Ming-Biao Li, Xiao-Ming Xiu +5
Al2O3 is a potential dielectric material for metal-oxide-semiconductor (MOS) devices. Al2O3 films deposited on semiconductors usually exhibit amorphous due to lattice mismatch. Com…
Unified nonequilibrium dynamical theory for exchange bias and training effects
Kai-Cheng Zhang, Bang-Gui Liu
We investigate the exchange bias and training effects in the FM/AF heterostructures using a unified Monte Carlo dynamical approach. This real dynamical method has been proved relia…