50 citations · 86 across the 4 of their papers we have counts for
4 papers
Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs
Guangnan Zhou, Yang Jiang, Gaiying Yang +5
We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing…
Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-gate-sweep Measurements
Guangnan Zhou, Fanming Zeng, Yang Jiang +5
In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mech…
Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates
Guangnan Zhou, Zeyu Wan, Gaiying Yang +5
In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate…
Achieving sub-1 Ohm-mm Non-Recess S/D Contact Resistance in GaN HEMTs Utilizing Simple CMOS Compatible La/Ti/Al/Ti Metal Contacts
Xinpeng Lin, Yumeng Zhu, Yongle Qi +10
In this paper, we report the use of lanthanum (La) in S/D contacts of GaN HEMTs, achieving 0.97 Ohm-mm contact resistance without S/D recess. The HEMTs show well-behaved electrical…