71 citations · 162 across the 8 of their papers we have counts for
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cond-mat.mes-hall2019★ 2 cited
RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors
Andreas Inhofer, Taylor Wilde, Jack Duffy +9
The topological state that emerges at the surface of a topological insulator (TI) and at the TI-substrate interface are studied in metal-hBN-Bi2Se3 capacitors. By measuring the RF…
cond-mat.mes-hall2017★ 1 cited
RF-quantum capacitance of the topological insulator Bi2Se3 in the bulk depleted regime for field-effect transistors
A. Inhofer, J. Duffy, M. Boukhicha +9
A Metal-dielectric-topological insulator capacitor device based on hBN-encapsulated CVD grown Bi2Se3 is realized and investigated in the radio frequency regime. The RF quantum capa…
cond-mat.mes-hall2014★ 30 cited
Stamping single wall nanotubes for circuit quantum electrodynamics
J. J. Viennot, J. Palomo, T. Kontos
We report on a dry transfer technique for single wall carbon nanotube devices which allows to embed them in high finesse microwave cavity. We demonstrate the ground state charge re…