activity
20182023
most citedInvestigation of Ta2O5 as an alternative high \k{appa} dielectric for InAlN/GaN MOS HEMT on Si

30 citations · 30 across the 4 of their papers we have counts for

collaborators
Showing 2019Show all

1 paper · 1 filter

physics.app-ph2019

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm

Sandeep Kumar, Sandeep Vura, Surani B. Dolmanan +3

We report on the demonstration of a deep sub-micron normally-off AlGaN/GaN HEMT with high on-current and high threshold voltage (VTH). The high-performance device was realized by u…