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F. Faisant

2 papers here

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author position
  • first author1
  • middle author1

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall2

identity via Semantic Scholar / OpenAlex

most citedPhysical properties of the Hall current

7 citations · 7 across the 1 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2021★ 7 cited

Physical properties of the Hall current

F. Faisant, M. Creff, J. -E. Wegrowe

We study the stationary state of Hall devices composed of a load circuit connected to the lateral edges of a Hall-bar. We follow the approach developed in a previous work (Creff et…

cond-mat.mes-hall2019

Surface currents in Hall devices

M. Creff, F. Faisant, J. M. Rubì +1

A variational approach is used in order to study the stationary states of Hall devices. Charge accumulation, electric potentials and electric currents are investigated on the basis…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.