230 citations · 372 across the 6 of their papers we have counts for
6 papers
Synthesis of strain-relaxed Ge-Sn alloys using ion implantation and pulsed laser melting
Tuan T. Tran, Quentin Hudspeth, Yining Liu +6
Ge-Sn alloys with a sufficiently high concentration of Sn is a direct bandgap group IV material. Recently, ion implantation followed by pulsed laser melting has been shown to be a…
Influence of symmetry breaking on Fano-like resonances in high Figure of Merit planar terahertz metafilms
Joshua A. Burrow, Riad Yahiaoui, Wesley Sims +7
It is well established that nearly all high-quality (Q) Fano-like resonances in terahertz (THz) metasurfaces broaden as asymmetry increases, resulting in a decline of Q-factor and…
Electromagnetically induced transparency control in terahertz metasurfaces based on bright-bright mode coupling
Riad Yahiaoui, Joshua A. Burrow, Sirak M. Mekonen +4
We demonstrate a classical analogue of electromagnetically induced transparency (EIT) in a highly flexible planar terahertz metamaterial (MM) comprised of three-gap split ring reso…
Polarization-dependent electromagnetic responses of ultrathin and highly flexible asymmetric terahertz metasurfaces
Joshua A. Burrow, Riad Yahiaoui, Andrew Sarangan +3
We report the polarization-dependent electromagnetic response from a series of novel terahertz (THz) metasurfaces where asymmetry is introduced through the displacement of two adja…
All-optical switching via four-wave mixing Bragg scattering in a silicon platform
Yun Zhao, David Lombardo, Jay Mathews +1
We employ the process of non-degenerate four-wave mixing Bragg scattering (FWM-BS) to demonstrate all-optical control in a silicon platform. In our configuration, a strong, non-inf…
Direct vs. indirect optical recombination in Ge films grown on Si substrates
G. Grzybowski, R. Roucka, J. Mathews +3
The optical emission spectra from Ge films on Si are markedly different from their bulk Ge counterparts. Whereas bulk Ge emission is dominated by the material's indirect gap, the p…