Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites

W. Pan, P. Lu, J. F. Ihlefeld +4

Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a…