498 citations · 1.3k across the 18 of their papers we have counts for
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Boron Arsenide Heterostructures: Lattice-Matched Heterointerfaces, and Strain Effects on Band Alignments and Mobility
Kyle Bushick, Sieun Chae, Zihao Deng +2
BAs is III-V semiconductor with ultra-high thermal conductivity, but many of its electronic properties are unknown. This work applies predictive atomistic calculations to investiga…
Imaging uncompensated moments and exchange-biased emergent ferromagnetism in FeRh thin films
Isaiah Gray, Gregory M. Stiehl, John T. Heron +5
Uncompensated moments in antiferromagnets are responsible for exchange bias in antiferromagnet/ferromagnet heterostructures; however, they are difficult to directly detect because…
Rutile GeO2: an ultrawide-band-gap semiconductor with ambipolar doping
Sieun Chae, Jihang Lee, Kelsey A. Mengle +2
Ultra-wide-band-gap (UWBG) semiconductors have tremendous potential to advance electronic devices as device performance improves superlinearly with increasing gap. Ambipolar doping…