33 citations · 41 across the 5 of their papers we have counts for
5 papers
Optical Properties of Charged Defects in Monolayer MoS
Martik Aghajanian, Arash A. Mostofi, Johannes Lischner
We present theoretical calculations of the optical spectrum of monolayer MoS with a charged defect. In particular, we solve the Bethe-Salpeter equation based on an atomistic ti…
Electronic Structure of Monolayer and Bilayer Black Phosphorus with Charged Defects
Martik Aghajanian, Arash A. Mostofi, Johannes Lischner
We use an atomistic approach to study the electronic properties of monolayer and bilayer black phosphorus in the vicinity of a charged defect. In particular, we combine screened de…
Substitutional tin acceptor states in black phosphorus
Mark Wentink, Julian Gaberle, Martik Aghajanian +6
Nominally-pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ubiquitious presence of impurity species or intrinsic, charged defects. Moreover…
Resonant and Bound States of Charged Defects in Two-Dimensional Semiconductors
Martik Aghajanian, Bruno Schuler, Katherine A. Cochrane +6
A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged accep…
Bound States of Charged Adatoms on MoS2: Screening and Multivalley Effects
Martik Aghajanian, Arash A. Mostofi, Johannes Lischner
Adsorbate engineering is a promising route for controlling the electronic properties of monolayer transition-metal dichalcogenide materials. Here, we study shallow bound states ind…