73 citations · 185 across the 9 of their papers we have counts for
9 papers
Three-photon excitation of quantum two-level systems
Viviana Villafañe, Bianca Scaparra, Manuel Rieger +8
We demonstrate that semiconductor quantum dots can be excited efficiently in a resonant three-photon process, whilst resonant two-photon excitation is highly suppressed. Time-depen…
Reduction of radiative lifetime and slow-timescale spectral diffusion in InGaN polarized single-photon sources
Tong Wang, Tongtong Zhu, Tim J. Puchtler +6
Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature s…
Effects of microstructure and growth conditions on quantum emitters in Gallium Nitride
Minh Nguyen, Tongtong Zhu, Mehran Kianinia +5
Single-photon emitters in gallium nitride (GaN) are gaining interest as attractive quantum systems due to the well-established techniques for growth and nanofabrication of the host…
An ultrafast polarised single photon source at 220 K
Tong Wang, Tim J. Puchtler, Tongtong Zhu +4
A crucial requirement for the realisation of efficient and scalable on-chip quantum communication is an ultrafast polarised single photon source operating beyond the Peltier coolin…
Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires
Tim J. Puchtler, Tong Wang, Christopher X. Ren +4
We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathod…
Experimental and theoretical analyses of strongly polarized photon emission from non-polar InGaN quantum dots
Tong Wang, Tim J. Puchtler, Saroj Kanta Patra +7
We present a comprehensive investigation of the polarization properties of non-polar a-plane InGaN quantum dots (QDs) and their origin with statistically significant experimental d…
Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities
Alexander Woolf, Tim Puchtler, Igor Aharonovich +5
Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium galliu…
Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy
Tongtong Zhu, Fabrice Oehler, Benjamin P. L. Reid +4
We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the gr…
Low threshold, room-temperature microdisk lasers in the blue spectral range
Igor Aharonovich, Alexander Woolf, Kasey J. Russell +4
InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperatu…