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cond-mat.mtrl-sci2019★ 1 cited
Applicability of molecular statics simulation to partial dislocations in GaAs
Thomas Riedl, Jörg K. N. Lindner
The suitability of molecular statics (MS) simulations to model the structure of 90° glide set partial dislocation cores in GaAs is analyzed. In the MS simulations the atomic positi…
cond-mat.mtrl-sci2019★ 3 cited
InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A
V. S. Kunnathully, T. Riedl, A. Trapp +3
Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxatio…