702 citations · 1.4k across the 5 of their papers we have counts for
5 papers
Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices
Weisheng Li, Jian Zhou, Songhua Cai +21
Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-qua…
Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors
Zhihao Yu, Zhun-Yong Ong, Songlin Li +5
Transition-metal dichalcogenides (TMDCs) are important class of two-dimensional (2D) layered materials for electronic and optoelectronic applications, due to their ultimate body th…
Realization of Room-Temperature Phonon-limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening
Zhihao Yu, Zhun-Yong Ong, Yiming Pan +9
We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperatur…
High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics
Yang Cui, Run Xin, Zhihao Yu +13
The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a s…
Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering
Zhihao Yu, Yiming Pan, Yuting Shen +12
Molybdenum disulfide is considered as one of the most promising two-dimensional semiconductors for electronic and optoelectronic device applications. So far, the charge transport i…