8 citations · 8 across the 1 of their papers we have counts for
2 papers
physics.app-ph2019★ 8 cited
High quality AlInN layers grown at low temperature (<300C) by radio-frequency sputtering
A Núñez-Cascajero, R. Blasco, S Valdueza-Felip +3
High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to…
physics.app-ph2018
Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering
S. Valdueza-Felip, A. Núñez-Cascajero, R. Blasco +8
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sput…