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cond-mat.mes-hall2017
Elastic Strain Fields In Lateral Double Ge/Si Quantum Dots
Yu. N. Morokov, M. P. Fedoruk
Simulations of the elastic strain fields for double Ge/Si quantum dots located on the same wetting layer are carried out. The cluster approximation is used for the atomistic model…
cond-mat.mes-hall2016
Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots
Yu. N. Morokov, M. P. Fedoruk
An atomistic model based on the Keating potential and the conjugate gradient method are used for simulation of the strain fields for single Ge/Si quantum dots. Calculations are per…
cond-mat.mes-hall2016
Structures with Vertically Stacked Ge/Si Quantum Dots for Logical Operations
Yu. N. Morokov, M. P. Fedoruk, A. V. Dvurechenskii +2
Ge/Si structures with vertically stacked quantum dots are simulated to implement the basic elements of a quantum computer for operation with electron spin states. Elastic-strain fi…