5 papers
Atomic origin for hydrogenation promoted bulk oxygen vacancies removal in vanadium dioxide
Bowen Li, Min Hu, Hui Ren +5
Oxygen vacancies (VO), a common type of point defects in metal oxides materials, play important roles on the physical and chemical properties. To obtain stoichiometric oxide crysta…
Spatially-resolved insulator-metal transition for rewritable optical gratings
Yuliang Chen, Changlong Hu, Liyan Xie +7
Doping is an effective way to tune the property of metal oxides1-5, for achieving functional oxide electronics6-8. Previously we developed a controllable hydrogen doping technology…
Wafer-size VO2 film prepared by water-vapor oxidant
H. Ren, B. Li, X. Zhou +7
The growth of wafer-scale and uniform monoclinic VO2 film was a challenge if considering the multivalent vanadium atom and the various phase structures of VO2 compound. Directly ox…
Electron-proton Co-doping Induced Metal-insulator Transition in VO2 Film via Surface Self-assembled Ascorbic Acid Molecules
Bowen Lia, Liyan Xieb, Zhaowu Wang +7
Charge doping is an effective way to induce metal-insulate transition (MIT) in correlated materials for many important utilizations, which is however practically limited by problem…
Gate-Controlled VO2 Phase Transition for High-Performance Smart Window
Shi Chen, Zhaowu Wang, Hui Ren +6
VO2 material is promising for developing energy-saving "smart window", owing to its thermochromic property induced by metal-insulator transition (MIT). However, its practical appli…