38 citations · 111 across the 6 of their papers we have counts for
6 papers
Electrostatic Charge Model for Dual-Layer Oxide Thin-Film Transistors
Måns J. Mattsson, John F. Wager, Matt W. Graham
A simple electrostatic two-equation model for dual-layer thin-film transistor (TFT) operation is developed. The model distributes electrostatic charge between the top and bottom se…
Shallow Trap States Control Electrical Performance of Amorphous Oxide Semiconductor Thin-Film Transistors
Måns J. Mattsson, Jinhan Lee, Christopher E. Malmberg +10
The performance of n-type amorphous oxide semiconductor thin-film transistors (TFTs) is largely controlled by the density of states (DoS) near the conduction band mobility edge. He…
Defect density of states of tin oxide and copper oxide p-type thin-film transistors
Måns J. Mattsson, Kham M. Niang, Jared Parker +4
The complete subgap defect density of states (DoS) is measured using the ultrabroadband (0.15 to 3.5 eV) photoconduction response from p-type thin-film transistors (TFTs) of tin ox…
Illuminating trap density trends in amorphous oxide semiconductors with ultrabroadband photoconduction
George W. Mattson, Kyle T. Vogt, John F. Wager +1
Under varying growth and device processing conditions, ultrabroadband photoconduction (UBPC) reveals strongly evolving trends in the defect density of states (DoS) for amorphous ox…
Hydrogen incorporation into amorphous indium gallium zinc oxide thin-film transistors
George W. Mattson, Kyle T. Vogt, John F. Wager +1
Within the subgap of amorphous oxide semiconductors like amorphous indium gallium zinc oxide (a-IGZO) are donor-like and acceptor-like states that control the operational physics o…
Ultrabroadband Density of States of Amorphous In-Ga-Zn-O
Kyle T. Vogt, Christopher E. Malmberg, Jacob C. Buchanan +6
The sub-gap density of states of amorphous indium gallium zinc oxide (-IGZO) is obtained using the ultrabroadband photoconduction (UBPC) response of thin-film transistors (TFTs)…