3 papers
cond-mat.mtrl-sci2021
Planar and 3-dimensional damage free etching of -Ga2O3 using atomic gallium flux
Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara +7
In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in -Ga2O3. Etching of …
physics.app-ph2020
Local Electric Field Measurement in GaN Diodes by exciton Franz-Keldysh Photocurrent Spectroscopy
Darpan Verma, Md Mohsinur Rahman Adnan, Mohammad Wahidur Rahman +2
The eXciton Franz-Keldysh (XFK) effect is observed in GaN p-n junction diodes via the spectral variation of photocurrent responsivity data that redshift and broaden with increasing…
physics.app-ph2019
Lateral Heterojunction BaTiO3/AlGaN Diodes with >8MV/cm Breakdown Field
Towhidur Razzak, Hareesh Chandrasekar, Kamal Hussain +11
In this paper, we report enhanced breakdown characteristics of Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes compared to Pt/Al0.58Ga0.42N Schottky diodes. BaTiO3, an extrem…