Improving the performance of Ge${}_2$Sb${}_2$Te${}_5$ materials via nickel doping: Towards RF-compatible phase-change devices

Pengfei Guo, Joshua A. Burrow, Gary A. Sevison +6

High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conducti…