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physics.app-ph2024
Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/AlGaAs heterostructure
C. P. Dobney, A. Nasir, P. See +5
We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/AlGaAs heterostructure. A section of the n-type material has been converted…
physics.app-ph2018★ 7 cited
Experimental verification of electrostatic boundary conditions in gate-patterned quantum devices
H. Hou, Y. Chung, G. Rughoobur +7
In a model of a gate-patterned quantum device it is important to choose the correct electrostatic boundary conditions (BCs) in order to match experiment. In this study, we model ga…