1 citations · 1 across the 1 of their papers we have counts for
2 papers
physics.app-ph2021★ 1 cited
High-Performance HZO/InAlN/GaN MIS-HEMT with fT/fmax of 155/250 GHz
Peng Cui, Hang Chen, John Q. Xiao +1
Scaling of GaN high-electron-mobility transistors (HEMTs) usually increases gate leakage current and deteriorates breakdown characteristic, limiting the maximum drain current and o…
cond-mat.mtrl-sci2019
Investigation of spin orbit torque driven dynamics in ferromagnetic heterostructures
Xinran Zhou, Hang Chen, Yu-Sheng Ou +5
We use time-resolved (TR) measurements based on the polar magneto-optical Kerr effect (MOKE) to study the magnetization dynamics excited by spin orbit torques in Py (Permalloy)/Pt…