30 citations · 52 across the 2 of their papers we have counts for
3 papers
Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors
Athith Krishna, Aditya Raj, Nirupam Hatui +2
In this study the MOCVD growth and electrical properties of N-polar modulation doped p-AlGaN/GaN superlattices (SLs) were investigated. Hole sheet charge density and mobility were…
AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment
Athith Krishna, Aditya Raj, Nirupam Hatui +4
To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable. Authors report the fi…
Strong Confinment of optical fields using localised surface phonon polaritons in cubic Boron Nitride
Ioannis Chatzakis, Athith Krishna, James Culbertson +4
Phonon polaritons (PhPs) are long-lived electromagnetic modes that originate from the coupling of infrared photons with the bound ionic lattice of a polar crystal. Cubic-Boron nitr…