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Emily V. S. Hofmann

2 papers hereh-index 492 citations10 works total

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author position
  • first author1
  • middle author1

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci1
  • physics.app-ph1

identity via Semantic Scholar / OpenAlex

collaborators

2 papers

cond-mat.mtrl-sci2022

Room temperature donor incorporation for quantum devices: arsine on germanium

Emily V. S. Hofmann, Taylor J. Z. Stock, Oliver Warschkow +3

Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, ef…

physics.app-ph2019

Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou +8

Over the last two decades, prototype devices for future classical and quantum computing technologies have been fabricated, by using scanning tunneling microscopy and hydrogen resis…

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