251 citations · 536 across the 19 of their papers we have counts for
6 papers · 1 filter
Competing Chern states revealed by quasiparticle charging in moiré rhombohedral graphene
Hongyuan Li, Zuhan Geng, Junseok Seo +13
Moiré materials realize a versatile platform for exploring the physics of fractional Chern insulators (FCIs). The recently observed evolution from FCIs to an extended quantum anoma…
Evidence of Spin-Valley Coupling in Dirac Material BaMnBi2 Probed by Quantum Hall Effect and Nonlinear Hall Effect
Subin Mali, Yingdong Guan, Lujin Min +2
Valleytronics is a rapidly advancing field that explores the use of the valley degree of freedom in electronic systems to encode and process information. It relies on electronic st…
Nonvolatile Switching of Magnetism via Gate-Induced Sliding in Tetralayer Graphene
Daniel Brandon, Tixuan Tan, Yiwen Ai +7
Interlayer sliding degrees of freedom often determine the physical properties of two-dimensional (2D) materials. In graphene, for instance, the metastable rhombohedral stacking arr…
Colossal nonreciprocal Hall effect and broadband frequency mixing due to a room temperature nonlinear Hall effect
Lujin Min, Yang Zhang, Zhijian Xie +8
Nonreciprocal (NR) charge transport in quantum materials has attracted enormous interest since it offers an avenue to investigate quantum symmetry related physics and holds many pr…
Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals
Yanglin Zhu, Cheng-Yi Huang, Yu Wang +9
Large intrinsic anomalous Hall effect (AHE) due to the Berry curvature in magnetic topological semimetals is attracting enormous interest due to its fundamental importance and tech…
Strong Room-Temperature Bulk Nonlinear Hall Effect in a Spin-Valley Locked Dirac Material
Lujin Min, Hengxin Tan, Zhijian Xie +8
Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, prev…