10 citations · 16 across the 4 of their papers we have counts for
4 papers
Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence
S. Benlenqwanssa, S. S. Krishtopenko, M. Meyer +13
We present a multi-probe transport analysis that effectively separates bulk and edge currents in large Hall bar devices with standard geometries. Applied to transport measurements…
Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells
C. Avogadri, S. Gebert, S. S. Krishtopenko +17
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a b…
GaSbBi alloys and heterostructures: fabrication and properties
O. Delorme, L. Cerutti, R. Kudrawiec +6
Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antim…
Molecular-beam epitaxy of GaSb on 6{\textdegree}-offcut (001) Si using a GaAs nucleation layer
M. Rio Calvo, J-B Rodriguez, L. Cerutti +3
We studied and optimized the molecular beam epitaxy of GaSb layers on vicinal (001) Si substrates using a GaAs nucleation layer. An in-depth analysis of the different growth stages…