A Novel PN junction between Mechanically Exfoliated \b{eta}-Ga2O3 and p-GaN

Jossue Montes, Chen Yang, Houqiang Fu +6

Several pn junctions were constructed from mechanically exfoliated ultrawide bandgap (UWBG) beta-phase gallium oxide (\b{eta}-Ga2O3) and p-type gallium nitride (GaN). The mechanica…