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20172019
most citedEffect of crystalline anisotropy on vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes on EFG single-crystal substrates

117 citations · 165 across the 5 of their papers we have counts for

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cond-mat.mtrl-sci2017★ 117 cited

Effect of crystalline anisotropy on vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes on EFG single-crystal substrates

Houqiang Fu, Hong Chen, Xuanqi Huang +4

Vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes (SBDs) were fabricated on single-crystal substrates grown by edge-defined film-fed growth (EFG) method. High resolution…