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physics.app-ph2018
A Novel PN junction between Mechanically Exfoliated \b{eta}-Ga2O3 and p-GaN
Jossue Montes, Chen Yang, Houqiang Fu +6
Several pn junctions were constructed from mechanically exfoliated ultrawide bandgap (UWBG) beta-phase gallium oxide (\b{eta}-Ga2O3) and p-type gallium nitride (GaN). The mechanica…
physics.app-ph2018
Demonstration of nonpolar m-plane vertical GaN-on-GaN p-n power diodes grown on free-standing GaN substrates
H. Fu, X. Zhang, K. Fu +10
This work demonstrates the first nonpolar vertical GaN on GaN pn power diodes grown on m-plane free standing substrates by MOCVD. The SEM and HRXRD results showed the good crystal…