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physics.app-ph2023
3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD
Dinusha Herath Mudiyanselage, Dawei Wang, Ziyi He +2
This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding…
physics.app-ph2023
Temperature Dependent Low-Frequency Noise Characteristics of NiO/GaO p-n Heterojunction Diodes
Subhajit Ghosh, Dinusha Herath Mudiyanselage, Fariborz Kargar +3
We report on the temperature dependence of the low-frequency electronic noise in NiO/GaO p-n heterojunction diodes. The noise spectral density is of the 1/f-type near r…