activity
20002020
most citedGeneralized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach

55 citations · 242 across the 21 of their papers we have counts for

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Showing 2015Show all

6 papers · 1 filter

cond-mat.mes-hall2015★ 9 cited

Inter-ribbon tunneling in graphene: an atomistic Bardeen approach

Maarten L. Van de Put, William G. Vandenberghe, Bart Sorée +2

A weakly coupled system of two crossed graphene nanoribbons exhibits direct tunneling due to the overlap of the wavefunctions of both ribbons. We apply the Bardeen transfer Hamilto…

cond-mat.mes-hall2015

Analytic solution of Ando's surface roughness model with finite domain distribution functions

Kristof Moors, Bart Sorée, Wim Magnus

Ando's surface roughness model is applied to metallic nanowires and extended beyond small roughness size and infinite barrier limit approximations for the wavefunction overlaps, su…

cond-mat.mes-hall2015

Modeling and tackling resistivity scaling in metal nanowires

Kristof Moors, Bart Sorée, Wim Magnus

A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collision term describing grain boundary and surface roughness scattering is presented…

cond-mat.mes-hall2015★ 19 cited

Modeling surface roughness scattering in metallic nanowires

Kristof Moors, Bart Sorée, Wim Magnus

Ando's model provides a rigorous quantum-mechanical framework for electron-surface roughness scattering, based on the detailed roughness structure. We apply this method to metallic…

cond-mat.stat-mech2015

Quantum canonical ensemble: a projection operator approach

Wim Magnus, Fons Brosens

Fixing the number of particles , the quantum canonical ensemble imposes a constraint on the occupation numbers of single-particle states. The constraint particularly hampers the…

cond-mat.mes-hall2015★ 4 cited

Electron relaxation times and resistivity in metallic nanowires due to tilted grain boundary planes

Kristof Moors, Bart Sorée, Zsolt Tokei +1

We calculate the resistivity contribution of tilted grain boundaries with varying parameters in sub-10nm diameter metallic nanowires. The results have been obtained with the Boltzm…