activity
20172026
most citedUnveiling valley lifetimes of free charge carriers in monolayer WSe

45 citations · 81 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2026

Localized emission in MoSe monolayers on GaN nanopillars

Abderrahim Lamrani Alaoui, Álvaro Moreno, Maximilian Heithoff +12

Solid-state quantum emitters (QEs) in two-dimensional semiconductors offer compact, chip-compatible sources for quantum photonics. In transition-metal dichalcogenides (TMDs), nanop…

cond-mat.mes-hall2023

Valley-hybridized gate-tunable 1D exciton confinement in MoSe2

Maximilian Heithoff, Álvaro Moreno, Iacopo Torre +14

Controlling excitons at the nanoscale in semiconductor materials represents a formidable challenge in the fields of quantum photonics and optoelectronics. Achieving this control ho…

cond-mat.mes-hall2020

Valley lifetimes of conduction band electrons in monolayer WSe

Manfred Ersfeld, Frank Volmer, Lars Rathmann +10

One of the main tasks in the investigation of 2-dimensional transition metal dichalcogenides is the determination of valley lifetimes. In this work, we combine time-resolved Kerr r…

cond-mat.mes-hall2019★ 45 cited

Unveiling valley lifetimes of free charge carriers in monolayer WSe

Manfred Ersfeld, Frank Volmer, Lars Rathmann +10

We report on nanosecond long, gate-dependent valley lifetimes of free charge carriers in monolayer WSe, unambiguously identified by the combination of time-resolved Kerr rotati…

cond-mat.mes-hall2017★ 36 cited

Spin States Protected from Intrinsic Electron-Phonon-Coupling Reaching 100 ns Lifetime at Room Temperature in MoSe

Manfred Ersfeld, Frank Volmer, Pedro Miguel M. C. de Melo +6

We present time-resolved Kerr rotation measurements, showing spin lifetimes of over 100 ns at room temperature in monolayer MoSe. These long lifetimes are accompanied by an int…