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From the 1 of 17 linked papers with an AI index.

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20242026
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17 papers

quant-ph20262 cited

Minute-long quantum coherence enabled by electrical depletion of magnetic noise

Cyrus Zeledon, Benjamin Pingault, Jonathan C. Marcks +13

The paper demonstrates that applying an electrical bias to an isotopically purified SiC p‑i‑n diode can deplete magnetic noise, extending the coherence and relaxation times of embe…

cond-mat.mes-hall2026

Ion Concentration and Voltage Imaging with Fluorescent Nanodiamonds

Patrick Voorhoeve, Hiroshi Abe, Takeshi Ohshima +5

The nitrogen-vacancy (NV) center in diamond exists in different charge states with distinct photoluminescence properties, which are sensitive to the nanoscale electrochemical envir…

cond-mat.mtrl-sci2026

Vacancy-mediated nitrogen diffusion and aggregation via high-fluence electron beam irradiation in HPHT synthesized diamond crystal

Chikara Shinei, Yuta Masuyama, Jun Chen +5

The negatively charged nitrogen vacancy (NV-) center in diamond is a promising point defect for highly sensitive quantum sensing. The formation of high-density NV- centers is essen…

quant-ph2026

Spectator-transition crosstalk in a spin-3/2 silicon vacancy qudit in silicon carbide revealed by broadband Ramsey interferometry

Jun-Jae Choi, Seung-Jae Hwang, Seoyoung Paik +9

Color center spins in 4H-SiC offer a rare combination of wafer-scale materials maturity with long spin coherence and chip-level photonics, making them promising building blocks for…

quant-ph2026

A robust laser cavity platform for NV-diamond singlet infrared absorption magnetometry

Shao Qi Lim, Alexander A. Wood, Brett C. Johnson +9

The negatively charged nitrogen-vacancy center (NV) in diamond is a versatile platform for quantum magnetometry under ambient conditions. Recently, laser threshold magnetometry…

quant-ph2026

Quantum electrometry in a silicon carbide power device

Yuichi Yamazaki, Akira Kiyoi, Naoyuki Kawabata +7

For high-bias operation devices such as silicon carbide (SiC) power devices, early detection of failure mechanisms is essential to ensure reliability. This requires a method to map…