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From pseudo-direct hexagonal germanium to direct silicon-germanium alloys
Pedro Borlido, Jens Renè Suckert, Jürgen Furthmüller +3
We present ab initio calculations of the electronic and optical properties of hexagonal SiGe alloys in the lonsdaleite structure. Lattice constants and electronic band structures i…
Efficient strain-induced light emission in lonsdaleite germanium
Jens René Suckert, Claudia Rödl, Jürgen Furthmüller +2
Lonsdaleite germanium has a direct band gap, but it is not an efficient light emitter due to the vanishing oscillator strength of electronic transitions at the fundamental gap. Tra…
Accurate electronic and optical properties of hexagonal germanium for optoelectronic applications
Claudia Rödl, Jürgen Furthmüller, Jens Renè Suckert +3
High-quality defect-free lonsdaleite Si and Ge can now be grown on hexagonal nanowire substrates. These hexagonal phases of group-IV semiconductors have been predicted to exhibit i…