Higher-harmonic generation in boron-doped silicon from band carriers and bound-dopant photoionization

Fanqi Meng, Frederik Walla, Sergey Kovalev +10

We investigate ultrafast harmonic generation (HG) in Si:B, driven by intense pump pulses with fields reaching ~100 kV/cm and a carrier frequency of 300 GHz, at 4 K and 300 K, both…