4 citations · 4 across the 2 of their papers we have counts for
3 papers
physics.app-ph2019
Threshold Voltage variation with respect to Gate geometry in Nano-scale MOSFETS
Raja N Mir
The tremendous progress in Metal Oxide Semiconductor (MOS) technology has been a direct consequence of device scaling for past several decades. But as we have entered the nanometer…
cond-mat.mes-hall2019
Electron Transport Through 2D Waveguide Using QTBM
Raja N. Mir, William R. Frensley
Simulation of Electron Transport through two dimensional(2D) waveguide using Quantum Transport Boundary Method (QTBM) is done. Specifically, as an example the results of modeling L…
cond-mat.mes-hall2014★ 4 cited
Simple remedy for spurious states in discrete k(dot)p models of semiconductor structures
William R. Frensley, Raja N. Mir
The spurious states found in numerical implementations of envelope function models for semiconductor heterostructures and nanostructures are artifacts of the use of the centered-di…