4 papers
Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing
Y. Wang, K. Huynh, M. E. Liao +9
Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Exten…
A Refined Model for Epitaxial Tilt of Epilayers Grown on Miscut Substrates
Michael E. Liao, Mark S. Goorsky
A refined model of the origin of epitaxial tilt on miscut (or vicinal) substrates is explained by employing crystal modeling and reciprocal space analysis. The Nagai tilt model (H.…
Experimental Observation of High Intrinsic Thermal Conductivity of AlN
Zhe Cheng, Yee Rui Koh, Abdullah Mamun +17
AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is th…
Thermal Conductance Across Harmonic-matched Epitaxial Al-sapphire Heterointerfaces
Zhe Cheng, Yee Rui Koh, Habib Ahmad +17
A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfac…