183 citations · 278 across the 8 of their papers we have counts for
8 papers
Nonlinear Characterization of Thin-Film LiNbO3 Acoustic Filters
Omar Barrera, Bryan T. Bosworth, Taran Anusorn +10
Compact, high-performance components in millimeter-wave (mmWave) communication systems demand new acoustic filter technology at increasingly higher frequencies. Among various promi…
Experimental observation of ballistic to diffusive transition in AlN thin films
Md Shafkat Bin Hoque, Michael E. Liao, Saman Zare +10
Bulk AlN possesses high thermal conductivity due to long phonon mean-free-paths, high group velocity, and long lifetimes. However, the thermal transport scenario becomes very diffe…
Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers
Henry T. Aller, Thomas W. Pfeifer, Abdullah Mamun +12
This study investigates thermal transport across nanocrystalline diamond/AlGaN interfaces, crucial for enhancing thermal management in AlGaN/AlGaN-based devices. Chemical vapor dep…
Imaging Hot Photocarrier Transfer across a Semiconductor Heterojunction with Ultrafast Electron Microscopy
Basamat S. Shaheen, Kenny Huynh, Yujie Quan +5
Semiconductor heterojunctions have gained significant attention for efficient optoelectronic devices owing to their unique interfaces and synergistic effects. Interaction between c…
Thin-Film Lithium Niobate Acoustic Resonator with High Q of 237 and k2 of 5.1% at 50.74 GHz
Jack Kramer, Vakhtang Chulukhadze, Kenny Huynh +6
This work reports a 50.74 GHz lithium niobate (LiNbO3) acoustic resonator with a high quality factor (Q) of 237 and an electromechanical coupling (k2) of 5.17% resulting in a figur…
Thin-Film Lithium Niobate Acoustic Filter at 23.5 GHz with 2.38 dB IL and 18.2% FBW
Omar Barrera, Sinwoo Cho, Lezli Matto +6
This work reports an acoustic filter at 23.5 GHz with a low insertion loss (IL) of 2.38 dB and a 3-dB fractional bandwidth (FBW) of 18.2%, significantly surpassing the state-of-the…
Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing
Y. Wang, K. Huynh, M. E. Liao +9
Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Exten…
Experimental Observation of High Intrinsic Thermal Conductivity of AlN
Zhe Cheng, Yee Rui Koh, Abdullah Mamun +17
AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is th…