2 papers
cond-mat.mtrl-sci2022
Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing
Y. Wang, K. Huynh, M. E. Liao +9
Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Exten…
cond-mat.mtrl-sci2019
Experimental Observation of High Intrinsic Thermal Conductivity of AlN
Zhe Cheng, Yee Rui Koh, Abdullah Mamun +17
AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is th…