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physics.app-ph2024
Leveraging both faces of polar semiconductor wafers for functional devices
Len van Deurzen, Eungkyun Kim, Naomi Pieczulewski +8
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a un…
cond-mat.mtrl-sci2024★ 5 cited
Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN
J. Moneta, M. Krysko, J. Z. Domagala +5
Strain relaxation of thick InGaN layers was studied in order to develop technology of InGaN templates for deposition of InGaN Quantum Wells (QWs) and InGaN layers of high-In-conten…