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20152021
most citedMagnetic skyrmion-based synaptic devices

296 citations · 1.1k across the 13 of their papers we have counts for

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7 papers · 1 filter

physics.app-ph2019★ 29 cited

Thermal Brownian Motion of Skyrmion for True Random Number Generation

Yong Yao, Xing Chen, Wang Kang +2

The true random number generators (TRNGs) have received extensive attention because of their wide applications in information transmission and encryption. The true random numbers g…

physics.app-ph2019★ 72 cited

Stochastic Computing Implemented by Skyrmionic Logic Devices

Haoyang Zhang, Daoqian Zhu, Wang Kang +2

Magnetic skyrmion, topologically non-trivial spin texture, has been considered as promising information carrier in future electronic devices because of its nanoscale size, low depi…

physics.app-ph2019★ 7 cited

Magnetic skyrmion spectrum under voltage excitation and its linear modulation

Xing Chen, Wang Kang, Daoqian Zhu +5

Magnetic skyrmions are topological quasiparticles with great potential for applications in future information storage and processing devices because of their nanoscale size, high s…

physics.app-ph2018

Low-Power (1T1N) Skyrmionic Synapses for Spiking Neuromorphic Systems

Tinish Bhattacharya, Sai Li, Yangqi Huang +3

In this work, we propose a `1-transistor 1-nanotrack' (1T1N) synapse based on movement of magnetic skyrmions using spin polarised current pulses. The proposed synaptic bit-cell has…

physics.app-ph2018★ 1 cited

Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory

Shouzhong Peng, Xiang Li, Wang Kang +7

Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-…

physics.app-ph2018★ 63 cited

Voltage-Driven High-Speed Skyrmion Motion in a Skyrmion Shift Device

Yizheng Liu, Na Lei, Chengxiang Wang +7

Magnetic skyrmions are promising information carriers for building future high-density and high-speed spintronic devices. However, to achieve a current-driven high-speed skyrmion m…

physics.app-ph2017★ 15 cited

Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Yu Zhang, Xiaoyang Lin, Jean-Paul Adam +14

Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies…