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20162026
most citedField-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium

65 citations · 127 across the 5 of their papers we have counts for

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Showing 2019Show all

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physics.app-ph2019★ 2 cited

Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device

Yang Liu, Bing Zhou, Zhengkun Dai +2

Writing magnetic bits by spin-orbit torques (SOTs) arising from spin Hall effect creates new possibilities for ultrafast and low-power magnetoresistive random access memory (MRAM).…