65 citations · 67 across the 2 of their papers we have counts for
2 papers
physics.app-ph2019★ 2 cited
Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device
Yang Liu, Bing Zhou, Zhengkun Dai +2
Writing magnetic bits by spin-orbit torques (SOTs) arising from spin Hall effect creates new possibilities for ultrafast and low-power magnetoresistive random access memory (MRAM).…
cond-mat.mtrl-sci2018★ 65 cited
Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium
Yang Liu, Bing Zhou, Jian-Gang Zhu
Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive rand…