Tuning electronic properties of FeSe${}_{0.5}$Te${}_{0.5}$ thin flakes by a novel field effect transistor

C. S. Zhu, J. H. Cui, B. Lei +8

Using a field-effect transistor (FET) configuration with solid Li-ion conductor (SIC) as gate dielectric, we have successfully tuned carrier density in FeSe${}_{0.5}$Te${}_{0.5}$ thin…