30 citations · 69 across the 6 of their papers we have counts for
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cond-mat.mtrl-sci2018★ 30 cited
Electrical and Optical Properties of Heavily Ge-Doped AlGaN
R. Blasco, A. Ajay, E. Robin +7
We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has…
physics.app-ph2018
Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering
S. Valdueza-Felip, A. Núñez-Cascajero, R. Blasco +8
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sput…